SSDF9510 13a, 100v, r ds(on) 110m ? -13a, -100v, r ds(on) 210m ? n and p-channel enhancement mode power mosfet elektronische bauelemente 14-nov-2012 rev. a page 1 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 9 5 1 0 = date code rohs compliant product a suffix of -c specifies halogen & lead-free description the SSDF9510 provide the designer with best combin ation of fast switching, low on-resistance and cost effec tiveness. the SSDF9510 meet the rohs and green product requir ement , 100% eas guaranteed with full function reliability approved. features low gate charge low on-resistance marking code package information absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit n-channel p-channel drain-source voltage v ds 100 -100 v gate-source voltage v gs 20 20 v continuous drain current @ v gs =10v 1 t c =25c i d 13 -13 a t c =100c 10.5 -10 pulsed drain current 2 i dm 48 -48 a single pulse avalanche energy 3 e as 50 50 mj avalanche current i as 10 -10 a power dissipation 4 p d 35.7 w maximum junction to ambient 1 r ja 62.5 c / w maximum junction to case 1 r jc 3.5 c / w operating junction & storage temperature range t j , t stg -55~150 c package mpq leader size to-252-4l 2.5k 13 inch ref. millimeter ref. millimeter min. max. min. max. a 6.4 6.8 f 0.4 0.6 b 9.4 10.2 g 2.2 2.4 c 5.4 5.8 h 0.45 0.55 d 2.4 3.0 i 1.4 1.8 e 1.27 ref. j 0.8 1.2 to-252-4l
SSDF9510 13a, 100v, r ds(on) 110m ? -13a, -100v, r ds(on) 210m ? n and p-channel enhancement mode power mosfet elektronische bauelemente 14-nov-2012 rev. a page 2 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static drain-source breakdown voltage n-ch bv dss 100 - - v v gs =0, i d =250 a p-ch -100 - - v gs =0, i d = -250 a gate-threshold voltage n-ch v gs(th) 1 - 2.5 v v ds =v gs , i d =250 a p-ch -1 - -2.5 v ds =v gs , i d = -250 a gate-source leakage current n-ch i gss - - 100 na v gs = 20v p-ch - - 100 drain-source leakage current n-ch i dss - - 1 a v ds =80v, v gs =0, t j =25c p-ch - - -1 v ds = -80v, v gs =0, t j =25c n-ch - - 5 v ds =80v, v gs =0, t j =55c p-ch - - -5 v ds = -80v, v gs =0 , t j =55c drain-source on-resistance 2 n-ch r ds(on) - - 110 m v gs =10v, i d =8a p-ch - - 210 v gs = -10v, i d = -8a n-ch - - 120 v gs =4.5v, i d =6a p-ch - - 250 v gs = -4.5v, i d = -6a total gate charge n-ch q g - 26.2 - nc n-channel v ds =80v, v gs =10v, i d =10a p-channel v ds = -80v, v gs = -4.5v, i d = -8a p-ch - 16 - gate-source charge n-ch q gs - 4.6 - p-ch - 4.4 - gate-drain (miller) charge n-ch q gd - 5.1 - p-ch - 8.7 - turn-on delay time n-ch t d(on) - 4.2 - ns n-channel v ds =50v, r g =3.3 ,r l =5 v gs =10v, i d =10a p-channel v ds = -50v, r g =3.3 , r d =6.25 v gs = -10v, i d = -8a p-ch - 9 - rise time n-ch t r - 8.2 - p-ch - 45 - turn-off delay time n-ch t d(off) - 35.6 - p-ch - 40 - fall time n-ch t f - 9.6 - p-ch - 4.6 - input capacitance n-ch c iss - 1535 - pf n-channel v gs =0, v ds =15v, f=1.0mhz p-channel v gs =0, v ds = -15v, f=1.0mhz p-ch - 1590 - output capacitance n-ch c oss - 60 - p-ch - 110 - reverse transfer capacitance n-ch c rss - 37 - p-ch - 70 - gate resistance n-ch r g - 2 4 v ds =v gs =0, f=1.0mhz p-ch - 8 12
SSDF9510 13a, 100v, r ds(on) 110m ? -13a, -100v, r ds(on) 210m ? n and p-channel enhancement mode power mosfet elektronische bauelemente 14-nov-2012 rev. a page 3 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions guaranteed avalanche chatacteristics single pulse avalanche energy 5 n-ch e as 10 - - mj v dd =50v, l=1mh, i as =5a p-ch 10 - - v dd = -50v, l=1mh,i as = -5a source-drain diode forward on voltage 2 n-ch v sd - - 1.2 v i s =1a, v gs =0, t j =25c p-ch - - -1.2 i s = -1a, v gs =0, t j =25c continuous source current 1,6 n-ch i s - - 13 a v d =v g =0, force current p-ch - - -13 pulsed source current 2,6 n-ch i sm - - 48 a p-ch - - -48 notes: 1 surface mounted on a 1 inch2 fr-4 board with 2oz copper. 2 pulse width Q 300 s, duty cycle Q 2%. 3 the eas data shows max. rating . the test conditi on is v dd =50v,v gs =10v,l=1mh,i as =10a 4 .the power dissipation is limited by 150 c junct ion temperature 5 the min. value is 100% eas tested guarantee. 6 the data is theoretically the same as i d and i dm , in real applications , should be limited by tota l power dissipation.
SSDF9510 13a, 100v, r ds(on) 110m ? -13a, -100v, r ds(on) 210m ? n and p-channel enhancement mode power mosfet elektronische bauelemente 14-nov-2012 rev. a page 4 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve (n-channel)
SSDF9510 13a, 100v, r ds(on) 110m ? -13a, -100v, r ds(on) 210m ? n and p-channel enhancement mode power mosfet elektronische bauelemente 14-nov-2012 rev. a page 5 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve (n-channel)
SSDF9510 13a, 100v, r ds(on) 110m ? -13a, -100v, r ds(on) 210m ? n and p-channel enhancement mode power mosfet elektronische bauelemente 14-nov-2012 rev. a page 6 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve (p-channel)
SSDF9510 13a, 100v, r ds(on) 110m ? -13a, -100v, r ds(on) 210m ? n and p-channel enhancement mode power mosfet elektronische bauelemente 14-nov-2012 rev. a page 7 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve (p-channel)
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